Nexperia's(formerly NXP)1PS76SB10,115 Schottky diode,utilizing advanced planar Schottky barrier technology combined with an integrated guard ring design,is encapsulated in an ultra-small SOD-323 SMD plastic package.This design provides engineers with unprecedented performance and space efficiency.

　　Datasheet

　　Key Advantages

　　Low Forward Voltage:Helps reduce power consumption and improve overall efficiency,especially in battery-powered devices,extending their operational time.

　　Low Capacitance:Reduces switching losses and accelerates switching speed,making it ideal for high-speed switching circuits.

　　AEC-Q101 Qualified:Undergoes rigorous automotive-grade testing,ensuring reliability and durability in harsh environments,suitable for automotive electronic applications.

　　Applications

　　Ultra-High-Speed Switching:Suitable for circuits requiring fast response and low losses,such as high-frequency switching power supplies and high-speed data converters.

　　Line Termination:Used for signal integrity control in high-speed data lines,preventing reflections and crosstalk.

　　Voltage Clamping:Protects circuits from overvoltage events,such as in ESD protection and transient voltage suppression.

　　Reverse Polarity Protection:Prevents circuit damage caused by reverse power supply polarity,commonly used in input protection circuits.

1PS76SB10,115-Package outline

1PS76SB10,115-Soldering