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STMicroelectronics Leads Electrification and Energy Efficiency Revolution with First Fully Integrated Silicon Carbide Facility in Italy

STMicroelectronics Leads Electrification and Energy Efficiency Revolution with First Fully Integrated Silicon Carbide Facility in Italy

2024-06-03 11:15:04      点击量: 4

  STMicroelectronics, a global semiconductor leader, announced plans to build the world's first fully integrated silicon carbide (SiC) manufacturing facility in Catania, Italy. The ambitious plan includes the construction of a large 200mm SiC manufacturing plant focused on power devices and modules, as well as test and packaging facilities. With an expected investment of €5bn, including significant support from the Italian government within the framework of the EU Chip Act, the Catania Silicon Carbide Park marks a transformational step in ST's commitment to the advancement of SiC technology.

  STMicroelectronics Leads Electrification and Energy Efficiency Revolution with First Fully Integrated Silicon Carbide Facility in Italy

  The Silicon Carbide Campus is designed to realise ST's vision of establishing a vertically integrated manufacturing facility for SiC, facilitating a seamless transition from R&D to volume production. By integrating SiC substrate development, epitaxial growth processes, wafer fabrication, module assembly and advanced R&D capabilities, ST aims to drive innovation and efficiency in automotive, industrial and cloud infrastructure applications.

  Jean-Marc Cherry, President and CEO of STMicroelectronics, emphasised the strategic significance of the Silicon Carbide Campus: "The fully integrated capabilities unlocked at the Catania Silicon Carbide Campus will significantly contribute to ST's SiC technology leadership among automotive and industrial customers in the coming decades." The move, with its focus on electrification and energy efficiency, is aligned with global decarbonisation goals and underlines ST's commitment to delivering sustainable semiconductor solutions.

  The Silicon Carbide Campus will be at the heart of ST's global SiC ecosystem, utilising 200mm technology to deliver enhanced yields and performance. From substrate development to module packaging, the facility will optimise the production process to enable the production of 200 mm SiC wafers at scale. This comprehensive approach ensures seamless integration and facilitates continued innovation in SiC technology.

  With production scheduled to begin in 2026, the facility aims to reach full capacity by 2033 and is expected to produce up to 15,000 wafers per week. The total investment of approximately €5 billion underscores ST's commitment to driving technological excellence and contributing to economic growth in Italy and beyond. In addition, sustainable practices are at the heart of the Silicon Carbide Campus, with an emphasis on responsible resource consumption and environmental stewardship.

  In summary, STMicroelectronics' investment in the Catania Silicon Carbide Campus represents a paradigm shift in semiconductor manufacturing, paving the way for electrification and energy efficiency improvements across a wide range of industries. By establishing a fully integrated SiC facility, ST reaffirms its commitment to innovation, sustainability and global technology leadership.

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