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Nexperia's Outstanding SiC MOSFET Discrete Devices in the Increasingly Popular D2PAK-7 Package

Nexperia's Outstanding SiC MOSFET Discrete Devices in the Increasingly Popular D2PAK-7 Package

2024-05-29 11:07:07      点击量: 20

  Nexperia recently announced the release of industry-leading 1200 V Silicon Carbide (SiC) MOSFETs in the increasingly popular D2PAK-7 Surface Mount Device (SMD) package, offering a choice of RDSon values of 30, 40, 60 and 80 mΩ. This release follows the introduction of two SiC MOSFETs in 3- and 4-pin TO-247 packages at the end of 2023, enabling the rapid expansion of Nexperia's SiC MOSFET portfolio to encompass devices with RDSon values of 17, 30, 40, 60, and 80 mΩ in flexible packages.

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  Product Features and Benefits

  High performance and wide range of applications

  The new NSF0xx120D7A0 family of devices meets the growing demand for high-performance SiC switches by excelling in industrial applications such as electric vehicle (EV) charging, uninterruptible power supply (UPS), and solar energy and energy storage system (ESS) inverters, and the adoption of the D2PAK-7 package further enhances their suitability for high-power, high-efficiency applications.

  Temperature Stability of RDSon

  RDSon is a key performance parameter of SiC MOSFETs that directly affects conduction power loss. Many manufacturers have a misnomer on the nominal value, ignoring the fact that RDSon can increase by more than 100% as the temperature rises, resulting in increased conduction losses. nexperia has used innovative process technology to ensure that RDSon increases by only 38% over the operating temperature range of 25°C to 175°C, achieving industry-leading temperature stability and significantly improving device reliability and performance.

  Threshold Voltage VGS(th) Specifications and Body Diode Forward Voltage (VSD)

  Tight threshold voltage VGS(th) specifications ensure that MOSFET discrete devices provide balanced current-carrying performance when used in parallel. The lower body diode forward voltage (VSD) improves device robustness and efficiency, while relaxing dead time requirements for current-continuous operation, allowing for more flexible and efficient system designs.

  Market Demand and Strategic Collaboration

  Nexperia's strategic partnership with Mitsubishi Electric Corporation (MELCO) also drove this product launch. This partnership not only enhances the energy efficiency and electrical performance of SiC wide bandgap semiconductors, but also strengthens future production capabilities to meet growing market demand.

  Application Areas

  Nexperia's SiC MOSFETs have significant application prospects in the following areas:

  Electric vehicle (EV) charging: Efficient power conversion and low-loss characteristics enable them to excel in EV charging piles.

  Uninterruptible Power Supplies (UPS): Stable RDSon and high reliability are suitable for applications requiring continuous power supply.

  Solar and Energy Storage System (ESS) inverters: optimized thermal performance and high efficiency make them ideal in renewable energy systems.

  Conclusion

  Nexperia's new 1200 V SiC MOSFET discrete devices demonstrate leading-edge technology with their excellent RDSon temperature stability, tight threshold voltage specifications and low body diode forward voltage. The D2PAK-7 package and high-performance features of these devices will further drive the widespread adoption of SiC MOSFETs in industrial applications such as electric vehicle charging, uninterruptible power supplies, and solar energy storage systems.Nexperia's strategic partnership with Mitsubishi Electric also demonstrates that the SiC semiconductor market will be even more expansive in the future, providing customers with more efficient and reliable solutions.

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