The BCP56,115 is a medium power NPN bipolar junction transistor (BJT) manufactured by Nexperia. It is packaged in a Surface Mount Device (SMD) plastic package and provides a highly efficient and stable solution for a wide range of applications such as linear regulators, power management, low-end switches, MOSFET drivers, battery drive devices, and amplifiers.

BCP56,115 Sketch Map

　　Features and Benefits

　　-High current handling capability: Supports up to 1A maximum DC collector current, adapting to application scenarios with high current demand.

　　-Multiple current gain options: Provides different current gain values to flexibly meet diversified application requirements.

　　-High power dissipation: 650 mW power dissipation capability, suitable for medium power applications to improve device performance.

　　-Exposed heatsink design: Exposed heatsink design in the SOT-223-3 package ensures superior thermal and electrical conductivity for improved thermal efficiency.

　　-Compact Package: SOT-223-3 plastic package saves space while providing medium power capability, suitable for space-constrained applications.

　　-AEC-Q101 certification: Certified to automotive electronic component standards to ensure high reliability and durability in automotive applications.

　　Application Areas

　　-Linear regulators: Used to regulate output voltage and protect circuits from power supply fluctuations.

　　-Power management: Effectively manage and regulate power distribution to ensure stable operation of circuits.

　　-Low-end switching: excels in switching applications with low-end current paths.

　　-MOSFET Driver: Used to drive MOSFET devices for efficient power conversion.

　　-Battery Driver: Enhances energy utilization efficiency of battery-powered devices.

　　-Amplifiers: Used for signal amplification to enhance signal strength and quality.

　　Datasheet

　　-Brand: Nexperia
　　-Package: SOT-223-4

　　-Product Category: Bipolar Transistors - Bipolar Junction Transistors (BJT)

　　-RoHS: Yes

　　-Mounting Style: SMD/SMT

　　-Package/Case: SOT-223-3

　　-Transistor Polarity: NPN

　　-Configuration: Single Tube Configuration

　　-Collector-base voltage (VCBO): 100 V

　　-Emitter-base voltage (VEBO): 5 V

　　-Collector-emitter saturation voltage: 500 mV

　　-Maximum DC collector current: 1 A

　　-Power dissipation (Pd): 650 mW

　　-Gain bandwidth product (fT): 180 MHz

　　-Minimum operating temperature: -55°C

　　-Maximum operating temperature: +150°C

　　-Family: BCP56

　　-DC current gain (hFE): 63 (5 mA,2 V), 63 (150 mA,2 V), 40 (500 mA,2 V) min.

　　-Maximum DC current gain (hFE): 63 (5 mA,2 V)

　　-Height: 1.7 mm

　　-Length: 6.7 mm

　　Conclusion

　　The BCP56,115 is a high-performance medium-power NPN transistor suitable for a wide range of electronic application scenarios thanks to its excellent current handling capability and high power dissipation characteristics. With AEC-Q101 certification ensuring reliable performance in demanding automotive applications, Nexperia offers this series of transistors that are ideal for engineers and designers developing highly efficient and reliable electronic products, enabling more efficient power management and signal amplification.

　　The superior performance and reliability of the BCP56,115 makes it the device of choice for applications such as linear regulators, power management and low-end switching, further enhancing the overall performance and reliability of electronic devices.

BCP56,115 Package Size