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D45H11G(onsmei) Transistor_Datasheet_Features_Package_Dimensions

D45H11G(onsmei) Transistor_Datasheet_Features_Package_Dimensions

2024-05-21 11:20:39      点击量: 9

The D45H11G is a high performance PNP type power transistor manufactured by onsemi. The device is widely used in general-purpose power amplification and switching applications such as output or driver stages of switching regulators, converters and power amplifiers. With its excellent performance and reliability, the D45H11G is ideal for use in a variety of power management and power amplification circuits.

D45H11G silkscreen

D45H11G silkscreen


D45H11G Features

  Low saturation voltage: Reduces power consumption and improves efficiency.

  Fast switching speed: suitable for high-frequency applications, ensuring fast system response.

  Complementary design: Works with NPN type transistors to simplify circuit design and improve overall performance.

  Environmental compliance: RoHS compliant, lead-free design, environmentally friendly and in line with international standards.


Datasheet


Model: D45H11G

  Package: TO-220AB

  Manufacturer: onsemi

  Product Category: Bipolar Transistors - Bipolar Junction Transistors (BJT)

  RoHS: Yes

  Mounting Style: Through Hole Mount

  Package/Case: TO-220-3

  Transistor Polarity: PNP

  Configuration: Single

  Emitter-base voltage (VEBO): -5 V

  Collector-emitter saturation voltage (VCE(sat)): -1 V

  Maximum DC collector current (IC): -10 A

  Power dissipation (Pd): 70 W

  Gain bandwidth product (fT): 40 MHz

  Operating temperature range: -55°C to +150°C

  Series: D45H11

  Collector Continuous Current: 10 A

  DC Collector/Base Gain (hFE) min: 60

  Height: 15.75 mm

  Length: 10.53 mm
  


D45H11G Key Benefits

  The D45H11G power transistor is designed to excel in a variety of applications. The following are its main advantages:

  1. High efficiency: Low saturation voltage characteristics significantly reduce power consumption and improve overall efficiency.

  2. Fast Response: High switching speeds ensure excellent performance in high-frequency applications and are suitable for modern high-performance electronic equipment.

  3. Design Flexibility: Complementary design simplifies circuit complexity and enables design engineers to easily integrate into a variety of power supply and amplifier designs.

  4. High Reliability: Internal structure and high quality materials ensure the device's long-term stability in harsh environments.

Application Scenarios

  The D45H11G complementary silicon power transistors are suitable for a variety of electronic devices that require high performance and high reliability. Specific application scenarios include but are not limited to

  Switching regulators: for efficient power management to ensure stable output voltage.

  Converters: Provide efficient power conversion in DC-DC conversion circuits.

  Power amplifiers: Used in audio amplifiers, RF amplifiers, and other devices that require high power output.

  General-purpose switches: used as high-performance switching devices in various switching circuits.

Conclusion

  The D45H11G is a PNP-type power transistor with superior performance for a wide range of applications. With its low saturation voltage, fast switching speed and high reliability, this device plays an important role in a variety of electronic devices. Whether used in switching regulators, converters, or power amplifiers, the D45H11G provides reliable performance and efficient power management, making it a key component in modern electronic designs.

D45H11G-Package Dimensions

D45H11G-Package Dimensions

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