The D45H11G is a high performance PNP type power transistor manufactured by onsemi. The device is widely used in general-purpose power amplification and switching applications such as output or driver stages of switching regulators, converters and power amplifiers. With its excellent performance and reliability, the D45H11G is ideal for use in a variety of power management and power amplification circuits.

D45H11G silkscreen

D45H11G Features

　　Low saturation voltage: Reduces power consumption and improves efficiency.

　　Fast switching speed: suitable for high-frequency applications, ensuring fast system response.

　　Complementary design: Works with NPN type transistors to simplify circuit design and improve overall performance.

　　Environmental compliance: RoHS compliant, lead-free design, environmentally friendly and in line with international standards.

Datasheet

Model: D45H11G

　　Package: TO-220AB

　　Manufacturer: onsemi

　　Product Category: Bipolar Transistors - Bipolar Junction Transistors (BJT)

　　RoHS: Yes

　　Mounting Style: Through Hole Mount

　　Package/Case: TO-220-3

　　Transistor Polarity: PNP

　　Configuration: Single

　　Emitter-base voltage (VEBO): -5 V

　　Collector-emitter saturation voltage (VCE(sat)): -1 V

　　Maximum DC collector current (IC): -10 A

　　Power dissipation (Pd): 70 W

　　Gain bandwidth product (fT): 40 MHz

　　Operating temperature range: -55°C to +150°C

　　Series: D45H11

　　Collector Continuous Current: 10 A

　　DC Collector/Base Gain (hFE) min: 60

　　Height: 15.75 mm

　　Length: 10.53 mm
　　

D45H11G Key Benefits

　　The D45H11G power transistor is designed to excel in a variety of applications. The following are its main advantages:

　　1. High efficiency: Low saturation voltage characteristics significantly reduce power consumption and improve overall efficiency.

　　2. Fast Response: High switching speeds ensure excellent performance in high-frequency applications and are suitable for modern high-performance electronic equipment.

　　3. Design Flexibility: Complementary design simplifies circuit complexity and enables design engineers to easily integrate into a variety of power supply and amplifier designs.

　　4. High Reliability: Internal structure and high quality materials ensure the device's long-term stability in harsh environments.

Application Scenarios

　　The D45H11G complementary silicon power transistors are suitable for a variety of electronic devices that require high performance and high reliability. Specific application scenarios include but are not limited to

　　Switching regulators: for efficient power management to ensure stable output voltage.

　　Converters: Provide efficient power conversion in DC-DC conversion circuits.

　　Power amplifiers: Used in audio amplifiers, RF amplifiers, and other devices that require high power output.

　　General-purpose switches: used as high-performance switching devices in various switching circuits.

Conclusion

　　The D45H11G is a PNP-type power transistor with superior performance for a wide range of applications. With its low saturation voltage, fast switching speed and high reliability, this device plays an important role in a variety of electronic devices. Whether used in switching regulators, converters, or power amplifiers, the D45H11G provides reliable performance and efficient power management, making it a key component in modern electronic designs.

D45H11G-Package Dimensions