MJD122T4G Transistor is a type of semiconductor device specifically designed for general-purpose amplifiers and low-speed switching applications. It plays the role of amplifying and switching control of the current. Its operating principle is based on the characteristics of semiconductor materials, and the current between the collector and emitter is regulated by controlling the base current.

MJD122T4G Features:

Lead forming for surface mount applications in plastic sleeves.

Surface mount replacement for 2N6040-2N6045 series, TIP120-TIP122 series, and TIP125-TIP127 series.

Monolithic structure with built-in base emitter shunt resistor.

High DC current gain: hFE = 2500 (typical) @ IC = 4.0 Adc.

Epoxy resin meets UL 94 V-0 @ 0.125 inches standard.

ESD Rating:

Human Body Model, 3B > 8000 V.

Machine Model, C > 400 V.

The prefix NJV is used for automotive and other applications that require unique site and control changes; certified by AEC-Q101 and capable of performing PPAP.

These devices are lead-free, halogen-free/BFR-free, and RoHS compliant.

In practical applications, MJD122T4G transistors are widely used in various electronic devices. For example, in mobile phones, computers, and other electronic products, it can be used in power management, signal amplification, and logic control. In addition, it also plays a key role in industrial control systems, automotive electronics, and communication equipment.

MJD122T4G Datasheet